Features: •1.2 radiation-hardened CMOS- Latchup immune• High speed• Low power consumption• Single 5 volt supply• Available QML Q or V processes• Flexible package - 14-pin DIP - 14-lead flatpackPinoutSpecifications SYMBOL PARAMETER LIMIT UNITS VD...
UT54ACTS132: Features: •1.2 radiation-hardened CMOS- Latchup immune• High speed• Low power consumption• Single 5 volt supply• Available QML Q or V processes• Flexible package ...
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Features: • 1.2radiation-hardened CMOS - Latchup immune• High speed• Low power c...
Features: •1.2 radiation-hardened CMOS- Latchup immune• High speed• Low power co...
SYMBOL |
PARAMETER |
LIMIT |
UNITS |
VDD VI/O TSTG TJ TLS JC II PD |
Supply voltage Voltage any pin Storage Temperature range Maximum junction temperature Lead temperature (soldering 5 seconds) Thermal resistance junction to case DC input current Maximum power dissipation |
-0.3 to 7.0 -.3 to VDD +.3 -65 to +150 +175 +300 20 10 1 |
V V /W mA W |
The UT54ACS132 and the UT54ACTS132 are 2-input NAND gates with Schmitt Trigger input levels. A high applied on both the inputs forces the output to a low state.
The devices are characterized over full military temperature range of -55 to +125.