Features: `1.2radiation-hardened CMOS- Latchup immune`High speed`Low power consumption`Single 5 volt supply`Available QML Q or V processes`Flexible package- 14-pin DIP- 14-lead flatpackPinoutSpecifications SYMBOL PARAMETER LIMITS UNIT VDD DC supply voltage -0.3...
UT54ACTS04: Features: `1.2radiation-hardened CMOS- Latchup immune`High speed`Low power consumption`Single 5 volt supply`Available QML Q or V processes`Flexible package- 14-pin DIP- 14-lead flatpackPinoutSpecifi...
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Features: • 1.2radiation-hardened CMOS - Latchup immune• High speed• Low power c...
Features: •1.2 radiation-hardened CMOS- Latchup immune• High speed• Low power co...
SYMBOL | PARAMETER |
LIMITS |
UNIT |
VDD | DC supply voltage |
-0.3 to +7.0 |
V |
VIO | Voltage on any pin |
-0.3 to VDD+0.3 |
V |
II | DC input current |
±10 |
mA |
TSTG | Storage temperature |
-65 to +150 |
°C |
TLS | Lead temperature (soldering 5 seconds) | +300 |
°C |
PD | Maximum power dissipation |
1 |
mW |
TJ | Maximum junction temperature |
+175 |
°C |
QJC | Thermal resistance, junction-to-case |
20 |
°C/W |
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The UT54ACS04 and the UT54ACTS04 are hex inverters. The circuits perform the Boolean function Y = A.
The devices are characterized over full military temperature range of -55 C to +125 C.