UT28F256

Features:

`Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory
       - Supported by industry standard programmer
`45ns and 40ns maximum address access time (-55 to +125 )
`TTL compatible input and TTL/CMOS compatible output levels
`Three-state data bus
`Low operating and standby current
       - Operating: 125mA maximum @25MHz
` Derating: 3mA/MHz
       - Standby: 2mA maximum (post-rad)
`Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019
       - Total dose: 1E6 rad(Si)
       - LETTH(0.25) ~ 100 MeV-cm2/mg
       - SEL Immune >128 MeV-cm2/mg
       - Saturated Cross Section cm2 per bit, 1.0E-11
       - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion
       - Memory cell LET threshold: >128 MeV-cm2/mg
`QML Q & V compliant part
       - AC and DC testing at factory
`Packaging options:
       - 28-lead 50-mil center flatpack (0.490 x 0.74)
       - 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
`VDD: 5.0 volts + 10%
`Standard Microcircuit Drawing 5962-96891

Pinout




Specifications

SYMBOL	PARAMETER	LIMITS	UNITS
VDD	DC supply voltage	-0.3 to 7.0	V
VI/O	Voltage on any pin	-0.5 to (VDD + 0.5)	V
TSTG	Storage temperature	-65 to +150
PD	Maximum power dissipation	1.5	W
TJ	Maximum junction temperature	+175
JC	Thermal resistance, junction-to-case 2	3.3	/W
II	DC input current	±10	mA

Description

The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256.

The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments.