US8KB80R

Bridge Rectifiers Diode-Bridge Rectifier

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SeekIC No. : 00135317 Detail

US8KB80R: Bridge Rectifiers Diode-Bridge Rectifier

floor Price/Ceiling Price

Part Number:
US8KB80R
Mfg:
Shindengen
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/6/5

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Product Details

Quick Details

Product : Single Phase Bridge Peak Reverse Voltage : 800 V
Max Surge Current : 575 A Forward Voltage Drop : 1 V
Maximum Reverse Leakage Current : 10 uA Maximum Operating Temperature : + 150 C
Length : 22.1 mm Width : 3.45 mm
Height : 18.5 mm Mounting Style : SMD/SMT
Package / Case : D-6K Packaging : Bulk    

Description

Maximum RMS Reverse Voltage :
Forward Continuous Current :
Power Dissipation :
Product : Single Phase Bridge
Maximum Operating Temperature : + 150 C
Maximum Reverse Leakage Current : 10 uA
Peak Reverse Voltage : 800 V
Packaging : Bulk
Mounting Style : SMD/SMT
Forward Voltage Drop : 1 V
Length : 22.1 mm
Width : 3.45 mm
Height : 18.5 mm
Package / Case : D-6K
Max Surge Current : 575 A


Features:

Rectified forward current : 4A(US4KB80R), 6A(US6KB80R), 8A(US8KB80R), (with heat sink) 10A(US10KB80R), 15A(US15KB80R), 30A(US30KB80R)
Large current capacity of 30A with compact package
High IFSM and High Voltage
UL approved Bridge Rectifier Diodes, registered in file number E142422
High-density mounting for improved space efficiency through the use of SIP(Single In-Line Package)



Application

·TV, Monitor, Switching power supply, PC, Audio, Printer


Specifications

Item Symbol Conditions
US4KB80R
US6KB80R
US8KB80R
Unit
Storage Temperature Tstg  
-55~150
Operation Junction Temperature Tj  
150
Maximun Reverse Voltage VRM  
800
V
Average Rectified Forward Current Io 60Hz sine wave,
Resistance load
With heatsink
4
(Tc=125)
6
(Tc=116)
8
(Tc=108)
A
Without heatsink
2.1
(Ta=30)
2.1
(Ta=30
2.2
(Ta=26)
Peak Surge Forward Current IFSM 60Hz sine wave, Non-repetitive
1cycle peak value, Tj=25
150
175
200
A
IFSM1 Non-repetitive, Tj=25
245
(tp=3ms)
470
(tp=1ms)
575
(tp=1ms)
Current Squared Time I2t Tj=25, Per diode
93
(3mst<8.3ms)
112
(1mst<8.3ms)
166
(1mst<8.3ms)
A2s
Dielectric Strength Vdis Terminals to cace, AC 1 minute
2.0
kV
Mounting Torque TOR (Recommended torque:0.5N・m)
0.8
N・m



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