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Features: · A collector current is large.· VCE(sat) : max. −370mV At IC = − 1A / IB = −50mAApplication·Low frequency amplifier·DriverSpecifications Parameter Symbol Limits Unit Collector-base voltage VCBO -30 V Collector-emitter vol...

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SeekIC No. : 004538709 Detail

US6T7: Features: · A collector current is large.· VCE(sat) : max. −370mV At IC = − 1A / IB = −50mAApplication·Low frequency amplifier·DriverSpecifications Parameter Symbol ...

US6T7 Data Sheet

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Part Number:: US6T7
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/22

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US6T4 evaluate
Features: · A collector current is large.· VCE(sat) : max. −250mV At IC=−1.5A / IB=...
US6T4TR evaluate
US $.09 - .09 / Piece

Transistors Bipolar (BJT) BIPOLAR PNP
US6T5 evaluate
Features: · A collector current is large.· VCE(sat) : max. −370mV At lc= −1.5A / lB= &...

Product Details

Description

Features:

· A collector current is large.
· V_CE(sat) : max. −370mV At I_C= − 1A / I_B = −50mA

Application

·Low frequency amplifier
·Driver

Specifications

Parameter	Symbol	Limits	Unit
Collector-base voltage	V_CBO	-30	V
Collector-emitter voltage	V_CEO	-30	V
Emitter-base voltage	V_EBO	-6	V
Collector current	I_C	-1.5	A
	I_CP	-3	A∗1
Power dissipation	P_c	400 1.0	mW∗2 W∗3
Junction temperature	T_j	150	°C
Range of storage temperature	T_stg	-55 to +150	°C

∗1 Single pulse, Pw=1ms.
∗2 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
∗3 Mounted on a 25mm×25mm× t 0.8mm Ceramic substrate.

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US6T7

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