UPS835L

Series: -
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Packaging: Cut Tape (CT)Alternate Packaging
Mounting Type: Surface Mount
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Diode Type: Schottky
Current - Average Rectified (Io): 8A
Voltage - DC Reverse (Vr) (Max): 35V
Voltage - Forward (Vf) (Max) @ If: 510mV @ 8A
Current - Reverse Leakage @ Vr: 1.4mA @ 35V
Manufacturer: Microsemi Commercial Components Group
Package / Case: Powermite?3
Supplier Device Package: Powermite 3


Features:

• Low Profile Maximum height of 1.1 mm
• Footprint Area of 16.51 mm
• Low VF Provides Higher Efficiency
• Supplied in 16mm Tape and Reel 6000 units/reel
• Low Thermal Resistance with Direct Thermal Path
  of Die on Exposed Cathode Heat Sink


Specifications

RATING	(Conditions)	SYMBOL	VALUE	UNIT
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage		VRRM VRWM VR	35 35 35	V V V
Average Rectified Forward Current	(@ Rated VR and TC = 100°C)	IO	8	A
Repetitive Peak Surge Current	(Non-Repetitive peak surge current @ IO = 8 Amps )	IFSM	100	A
Storage Temperature Range		Tstg, TC	-55 to 125	°C
Operating Temperature Range		TJ	-55 to 125	°C
Voltage Rate of Change	(@ Rated VR and TJ = 25°C)	dv/dt	1000	V/ms