Features: · Very low thermal resistance package· Efficient heat path with integral locking bottom metal tab· Full metallic bottom eliminates flux entrapment· RoHS Compliant with e3 suffix· High speed switching capability· Compatible with ...
UPGA301Ae3: Features: · Very low thermal resistance package· Efficient heat path with integral locking bottom metal tab· Full metallic bottom eliminates flux entrapment· ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Rating | Symbol | Value | Unit |
Repetative peak Off-State Voltage | VDRM | 100 | V |
Peak On-State Current for 50 ns (max) | ITSM | 100 | A |
Peak Gate Current | IGM | 250 | mA |
Reverse Gate Voltage | VGR | 5 | V |
Storage Temperature Range | T s | -50 to 150 | °C |
Operating Temperature Range | T J | 0 to 125 | °C |
The UPGA301Ae3 is Designed for high current narrow-pulse switching applications where size and current handling capability are critical.
These devices UPGA301Ae3 may be triggered on using low power logic drivers from (+0.8 V at 200 A).
Epoxy packaged, oxide passivated planar SCR chips with metallurgic bonds on both sides to achieve high reliability. Internal wire bond connection allows high current surge capability for narrow pulse applications.