UPG2301TQ Selling Leads, Price trend , NEC/CEL, UPG2301TQ DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00613404 Detail

UPG2301TQ: RF Amplifier Power Amplifier

UPG2301TQ Data Sheet

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Part Number:: UPG2301TQ
Mfg:: NEC/CEL
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/11/22

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Product Details

Quick Details

Mounting Style :

SMD/SMT

Package / Case :

TSON-10

Description

Type :
Operating Frequency :
Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Package / Case : TSON-10

Features:

• OPERATION FREQUENCY
   f_opt = 2,400 to 2,500 MHz (2 450 MHz TYP.)
• SUPPLY VOLTAGE
   VCC1, 2 = V_bias = 2.7 to 3.6 V (3.3 V TYP.)
• CONTROL VOLTAGE
   V_cont = 0 to 3.6 V (2.5 V TYP.)
   V_enable = 0 to 3.1 V (2.9 V TYP.)
• CIRCUIT CURRENT
   I_CC = 120 mA TYP.@ V_{CC1, 2} = V_bias = 3.3 V, V_cont = 2.5 V,
   V_enable = 2.9 V, P_in = +4 dBm
• MAXIMUM POWER
   P_out(MAX.) = +23 dBm TYP.@ V_{CC1, 2} = V_bias = 3.3 V,
   V_cont = 2.5 V, V_enable = 2.9 V, P_in = +4 dBm
• GAIN CONTROL RANGE
   G_CR = 23 dB TYP.@ V_{CC1, 2} = V_bias = 3.3 V,
   V_cont = 0 to 2.5 V, V_enable = 2.9 V, P_in = +4 dBm
• POWER GAIN
   G_P = 23 dB TYP.(Reference value)
• HIGH EFFICIENCY
   _PAE = 50% TYP.(Reference value)
• SHUT DOWN FUNCTION
• HIGH-DENSITY SURFACE MOUNTING
   10 pin plastic TSON package (2.4 × 2.55 × 0.6 mm)

Application

• POWER AMPLIFIER FOR BLUETOOTH CLASS 1
• WIRELESS LAN

Pinout

Connection Diagram

Specifications

PARAMETER	Symbol	Ratings	Unit
Supply Voltage	V_CC1,2	5.0	V
	V_bias
Control Voltage	V_cont	3.6	V
	V_enable
Circuit Current	I_CC	400	mA
Control Current	I_cont	0.5	mA
	I_enable
Power Dissipation	P_D	700 ^Note	mW
Operating Ambient Temperature	T_A	−40 to +85
Storage Temperature	T_STG	-55 to 150
Input Power	P_in	+10	dBm

Note Mounted on double copper-clad 50 * 50 * 1.6 mm epoxy glass PWB, T_A = +85

Description

NEC's µPG2301TQ is a GaAs HBT MMIC for power amplifi er for Bluetooth Class 1.

This device µPG2301TQ realizes high effi ciency, high gain and high output power by using InGaP HBT. This device is housed in a low profi le 10-pin plastic TSON package.

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UPG2301TQ

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