UPG2009 Selling Leads, Price trend, UPG2009 DataSheet download, circuit diagram from SeekIC.com

Features: • Low insertion l oss: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz• High isolation: 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz• power HAN DLING : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz̶...

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SeekIC No. : 004538351 Detail

UPG2009: Features: • Low insertion l oss: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz• High isolation: 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f =...

UPG2009 Data Sheet

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Part Number:: UPG2009
Supply Ability:: 5000

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Qty
1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/22

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Recent History
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Product Details

Description

Features:

• Low insertion l oss: 0.25 dB TYP. @ V_cont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ V_cont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High isolation: 28 dB TYP. @ V_cont1/2 = 2.8 V/0 V, f = 2.0 GHz
• power HAN DLING : P_{in (0.1dB)} = 34 dBm TYP. @ V_cont1/2 = 2.8 V/0 V, f = 1.0 GHz
• BIDIREIREIRECTIONATIONATIONATIONATIONAL, S SYMMETRIETRIETRIETRICAL
• 6-pin super m minimold ld ld package (2.0 × 1.25 × 0.9 mm)

Application

• L-band digital cellular or cordless telephone
• BluetoothTM , W -LAN and W LL
• Short R ange W ireless

Specifications

Parameter	Symbol	Ratings	Unit
Control Voltage 1, 2	V_{cont1, 2}	−6.0 to +6.0 ^{N ote1}	V
Input Power	P_in	+36	dBm
Total Power Dissipation	P_tot	0.15	W
Operating Ambient Temperature	T_A	−45 to +85
Storage Temperature	T_stg	−55 to +150

Note | V_cont1 - V_cont2 | 6.0 V

Description

NEC's UPG2009TB is a L, S-band SPDT (Single Pole Double Throw) GaAs FET switch for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high isolation.

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UPG2009

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