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UPG2009

Features: • Low insertion l oss: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz• High isolation: 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz• power HAN DLING : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz̶...

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SeekIC No. : 004538351 Detail

UPG2009: Features: • Low insertion l oss: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz• High isolation: 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f =...

UPG2009 Data Sheet

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Part Number:
UPG2009
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low insertion l oss: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High isolation: 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• power HAN DLING : Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
• BIDIREIREIRECTIONATIONATIONATIONATIONAL, S SYMMETRIETRIETRIETRICAL
• 6-pin super m minimold ld ld package (2.0 × 1.25 × 0.9 mm)




Application

• L-band digital cellular or cordless telephone
• BluetoothTM , W -LAN and W LL
• Short R ange W ireless


Specifications

Parameter
 Symbol
 Ratings
Unit
Control Voltage 1, 2 Vcont1, 2 −6.0 to +6.0 N ote1 V
Input Power Pin +36 dBm
Total Power Dissipation Ptot 0.15 W
Operating Ambient Temperature TA −45 to +85
Storage Temperature Tstg −55 to +150
Note | Vcont1 - Vcont2 | 6.0 V


Description

NEC's UPG2009TB is a L, S-band SPDT (Single Pole Double Throw) GaAs FET switch for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high isolation.




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