UPD6133

• Program memory (ROM)
` µPD6133: 512 * 10 bits
` µPD6134: 1002 * 10 bits
• Data memory (RAM): 32 * 4 bits
• Built-in carrier generation circuit for infrared remote control
• Program memory (ROM) : 512 * 10 bits
• Data memory (RAM) : 32 * 4 bits
• Built-in carrier generation circuit for infrared remote control
• 9-bit programmable timer : 1 channel
• Command execution time : 8 µs (when operating at fX = 1 MHz: ceramic oscillation)
• Stack level : 1 level (Stack RAM is for data memory RF as well.)
• I/O pins (KI/O) : 8 units
• Input pins (KI) : 4 units
• Sense input pin (S0) : 1 unit
•S1/LED pin (I/O) : 1 unit (When in output mode, this is the remore control transmissiondisplay pin.)
• Power supply voltage : V_DD = 1.8 to 3.6 V (when operating at fX = 500 kHz)
V_DD = 2.2 to 3.6 V (when operating at fX = 1 MHz)
• Operating ambient temperature : TA = 40 to +85
• Oscillation frequency : fX = 300 kHz to 1 MHz
• POC circuit (Mask option)

Equipped with low-voltage 1.8V operation, a carrier generation circuit for infrared remote controltransmission,a standby release function through key entry, and a programmable timer, the µPD6133and6134 are suitable forinfrared remote control transmitters.

For the µPD6133 and 6134, we have made available the one-time PROM product µPD61P34B for programevaluation or small-quantity production.