UPD29F064115-X

Features:

* Four bank organization enabling simultaneous execution of program / erase and read
* High-speed read with page mode
* Bank organization : 4 banks (8M bits + 24M bits + 24M bits + 8M bits)
* Memory organization : 4,194,304 words * 16 bits
* Sector organization : 142 sectors (4K words * 16 sectors, 32K words * 126 sectors)
   The boot sector is located at the highest address (sector) and the lowest address (sector)
* 3-state output
* Automatic program
* Program suspend / resume
* Unlock bypass program
* Automatic erase
* Chip erase
* Sector erase (sectors can be combined freely)
* Erase suspend / resume
* Program / Erase completion detection
* Detection through data polling and toggle bits
* Detection through RY (/BY) pin
* Sector group protection
* Any sector group can be protected
* Any protected sector group can be temporary unprotected
* Any sector group can be unprotected
* Sectors can be used for boot application
* Hardware reset and standby using /RESET pin
* Automatic sleep mode
* Boot block sector protect by /WP (ACC) pin
* Extra One Time Protect Sector provided
* Program / erase time
* Program : 11.0 s / word (TYP.)
* Sector erase :
   Program / erase cycle : 100,000 cycle
     0.15 s (TYP.) (4K words sector), 0.5 s (TYP.) (32K words sector)
   Program / erase cycle : 300,000 cycle
     0.5 s (TYP.) (4K words sector), 0.7 s (TYP.) (32K words sector)
* Program / erase cycle : 300,000 cycle (MIN.)

Pinout

Description

  The PD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can be erased at a low voltage (1.65 to 1.95 V, 1.8 to 2.1 V ) supplied from a power source, or the contents of the entire chip can be erased. Memory organization is 4,194,304 words * 16 bits, so that the memory can be programmed in word units. PD29F064115-X can be read high speed with page mode.

  The PD29F064115-X can be read while its contents are being erased or programmed. The memory cell is divided into four banks. While sectors in any bank are being erased or programmed, data can be read from the other three banks thanks to the simultaneous execution architecture. The banks are 8M bits, 24M bits, 24M bits and 8M bits.

  Input /output voltage is supplied to 2.7 to 3.3 V.

  Because the PD29F064115-X enables the boot sector to be erased, it is ideal for storing a boot program. In addition, program code that controls the flash memory can be also stored, and the program code can be programmed or erased without the need to load it into RAM. 16 small sectors for storing parameters are provided, each of which can be erased in 4K words units.

  Once a program or erase command sequence has been executed, an automatic program or automatic erase function internally executes program or erase and verification automatically. The programming time is about 0.5 seconds per sector. The erase time is less than 1 second per sector.

  Because the PD29F064115-X can be electrically erased or programmed by writing an instruction, data can be reprogrammed on-board after the flash memory has been installed in a system, making it suitable for a wide range of applications.

  This flash memory is packed in 48-pin PLASTIC TSOP (I), 63-pin TAPE FBGA and 85-pin TAPE FBGA.