Features: • Word organization 4,194,304 words by 8 bits (BYTE mode) 2,097,152 words by 16 bits (WORD mode)• Page access modeBYTE mode : 8 byte random page access (µPD23C32040AL) 16 byte random page access (µPD23C32080AL) WORD mode : 4 word random page access (µPD23C32...
UPD23C32080AL: Features: • Word organization 4,194,304 words by 8 bits (BYTE mode) 2,097,152 words by 16 bits (WORD mode)• Page access modeBYTE mode : 8 byte random page access (µPD23C32040AL) 16...
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DescriptionThe UPD2364E-1 is a 65536-bit read-only memory utilizing NMOS silicon gate techology.Th...
Features: Word organization (33,554,432 + 1,048,576Note) words by 8 bits Page size (512 + 16Note)...
Features: • Word organization 4,194,304 words by 8 bits (BYTE mode) 2,097,152 words by 16 bi...
Parameter | Symbol | Condition | Rating | Unit |
Supply voltage | VCC | 0.3 to +4.6 | V | |
Input voltage | VI | 0.3 to VCC+0.3 | V | |
Output voltage | VO | 0.3 to VCC+0.3 | V | |
Operating ambient temperature | TA | 10 to +70 | °C | |
Storage temperature | T | 65 to +150 | °C |
The µPD23C32040AL and µPD23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is
selectable (BYTE mode : 4,194,304 words by 8 bits, WORD mode : 2,097,152 words by 16 bits).
The active levels of OE (Output Enable Input) can be selected with mask-option.
The µPD23C32040AL and µPD23C32080AL are packed in 48-pin PLASTIC TSOP(I) and 44-pin PLASTIC SOP.