UPC8211TK

Type :
Operating Frequency :
Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Package / Case : S06


Features:

• LOW NOISE: NF = 1.3 dB TYP.
• HIGH GAIN: GP = 18.5 dB TYP.
• LOW CURRENT CONSUMPTION: ICC = 3.5 mA TYP. at VCC = 3.0 V
• BUILT-IN POWER SAVE FUNCTION:
• HIGH-DENSITY SURFACE MOUNTING: 6-pin lead less minimold package ( 1.5 x 1.3 x 0.55 mm)


Application

• Low Noise amplifi er for GPS and mobile communications
• General purpose low noise amplifi er


Pinout




Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCC	Supply Voltage	V	4.0
PD	Power Dissipation	mW	232
TA	Operating Ambient Temperature	°C	-40 to +85
TSTG	Storage Temperature	°C	-55 to +150
PIN	Input Power	dBm	+10

Notes:
1. Mounted on a double-sided copper-clad 50 x 50 x 1.6 mm epoxy glass PWB


Description

NEC's UPC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifi er for GPS and as a general low nois amplifi er for mobile communications.

The UPC8211TK package is 6-pin lead-less minimold (1.5 x 1.3 x 0.55 mm) suitable for surface mount and optimized for very densely populated compact designs.

This IC UPC8211TK  is manufactured using NEC's 60 GHz fTUHS2 (Ultra High Speed Pro cess) silicon bipolar process. This process can realize excellent low noise peformance and low power consumption simultaneously. NEC's stringent quality assurance and test procedures en sure the highest reliability and per for mance.