RF Amplifier Lo-Current Amplifier
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SYMBOLS | PARAMETERS | UNITS | RATINGS |
VCC | Supply Voltage | V | 3.6 |
ICC | Circuit Current | mA | 15 |
PD | Power Dissipation2 | mW | 232 |
TOP | Operating Temperature | °C | -40 to +85 |
TSTG | Storage Temperature | °C | -55 to +150 |
PIN | Input Powe | dBm | +5 |
NEC's UPC8179TK is a silicon monolithic integrated circuit designed as an amplifier for mobile communications. This IC can realize low current consumption with external chip inductor. The incorporation of a chip identical to the conventional 6- pin super minimold package (2.0 x 1.25 x 0.9 mm) µPC8179TB in a 6-pin leadless minimold package (1.5 x 1.1 x 0.55 mm) has enabled a reduction in mounting area of 50 %. The µPC8179TK is ideally suited to replace the µPC8179TB for footprint reduction and increased design density. This IC is manufactured using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/ migration. Thus this IC has excellent performance uniformity and reliability.
NEC's stringent quality assurance and test procedures assure the highest performance. consistency and reliability.