UPC8178TB

RF Amplifier Low Power Amplifier

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UPC8178TB Picture
SeekIC No. : 00613373 Detail

UPC8178TB: RF Amplifier Low Power Amplifier

floor Price/Ceiling Price

Part Number:
UPC8178TB
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Type : RF IC's Operating Frequency : 2.4 GHz
Operating Supply Voltage : 2.4 V to 3.3 V Mounting Style : SMD/SMT
Package / Case : SOT-363    

Description

Noise Figure :
Bandwidth :
Output Intercept Point :
Supply Current :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Operating Frequency : 2.4 GHz
Package / Case : SOT-363
Type : RF IC's
Operating Supply Voltage : 2.4 V to 3.3 V


Features:

• LOW CURRENT CONSUMPTION
ICC = 1.9 mA TYP @ VCC = 3.0 V
• SUPPLY VOLTAGE:VCC = 2.4 to 3.3 V
• EXCELLENT ISOLATION:
ISOL = 39 dB TYP @ f = 1.0 GHz
ISOL = 40 dB TYP @ f = 1.9 GHz
ISOL = 38 dB TYP @ f = 2.4 GHz
• POWER GAIN:
GP = 11.0 dB TYP @ f = 1.0 GHz
GP = 11.5 dB TYP @ f = 1.9 GHz
GP = 11.5 dB TYP @ f = 2.4 GHz
• OPERATING FREQUENCY:0.1 to 2.4 GHz (Output port LC matching)
• 1 dB GAIN COMPRESSION OUTPUT POWER:
PO(1 dB) = -4.0 dBm TYP @ f = 1.0 GHz
PO(1 dB) = -7.0 dBm TYP @ f = 1.9 GHz
PO(1 dB) = -7.5 dBm TYP @ f = 2.4 GHz
• HIGH-DENSITY SURFACE MOUNTING:6-pin super minimold package (2.0 x 1.25 x 0.9 mm)
• LOW WEIGHT:7 mg (Standard Value)



Application

• Buffer Amplifiers on 0.1 to 2.4 GHz mobile communications system


Specifications

Parameter
Symbol
Ratings
Unit
Supply Voltage2
VCC
3.6
V
Circuit Current
ICC
15
mA
Power Dissipation3
PD
270
mW
Operating Ambient Temperature
TA
-40 to +85
°C
Storage Temperature
Tstg
-55 to 150
°C
Input Power
PIN
+5
dBm
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage.
2. Pins 4 and 6.
3. Mounted on a double-sided copper clad 50x50x1.6 mm epoxy glass PWB, TA = +85°C.



Description

The UPC8178TB is a silicon monolithic integrated circuit designed as an amplifier for mobile communications. This IC can realize low current consumption with an external chip inductor which cannot be realized on an internal 50 wideband matched IC. This low current amplifier operates on 3.0 V. This device is manufactured using NEC's 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process which uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.




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