Features: • SUPPLY VOLTAGE:VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V• BUILT-IN LPF:Suppresses spurious multipled by TX local (LO1)• AGC AMPLIFIER INSTALLED IN LOCAL PORT OFUPCONVERTER:GCR = 35 dB MIN. @ fout = 1.5 GHz• EXCELLENT PERFORMANCE:Padj = -65dBc TYP. @ f = ±50 ...
UPC8158K: Features: • SUPPLY VOLTAGE:VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V• BUILT-IN LPF:Suppresses spurious multipled by TX local (LO1)• AGC AMPLIFIER INSTALLED IN LOCAL PORT OFUPCO...
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SYMBOLS | PARAMETERS | UNITS | RATINGS |
VCC | Supply Voltage | V | 5.0 |
VPS/VAGC | Power Save & AGC Control | V | 5.0 |
PD | Power Dissipation2 | mW | 430 |
TA | Operating Ambient Temp | -40 to +85 | |
TSTG | Storage Temperature | -55 to +150 |
The UPC8158K is a silicon microwave monolithic integrated circuit designed as a quadrature modulator for digital mobile communication systems. This MMIC consist of a 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save functions. This configuration suits IF modulation systems and is packaged in a 28-pin QFN suitable for high density mounting. The chip is manufactured using NEC's 20 GHz fT silicon bipolar process NESATTM III to realize low power consumption. Consequently the UPC8158K can contribute to make RF blocks smaller size, higher performance and lower power consumption.