UPC8158K

Features: • SUPPLY VOLTAGE:VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V• BUILT-IN LPF:Suppresses spurious multipled by TX local (LO1)• AGC AMPLIFIER INSTALLED IN LOCAL PORT OFUPCONVERTER:GCR = 35 dB MIN. @ fout = 1.5 GHz• EXCELLENT PERFORMANCE:Padj = -65dBc TYP. @ f = ±50 ...

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UPC8158K Picture
SeekIC No. : 004538059 Detail

UPC8158K: Features: • SUPPLY VOLTAGE:VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V• BUILT-IN LPF:Suppresses spurious multipled by TX local (LO1)• AGC AMPLIFIER INSTALLED IN LOCAL PORT OFUPCO...

floor Price/Ceiling Price

Part Number:
UPC8158K
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/22

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Product Details

Description



Features:

• SUPPLY VOLTAGE:
VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V
• BUILT-IN LPF:
Suppresses spurious multipled by TX local (LO1)
• AGC AMPLIFIER INSTALLED IN LOCAL PORT OF
UPCONVERTER:
GCR = 35 dB MIN. @ fout = 1.5 GHz
• EXCELLENT PERFORMANCE:
Padj = -65dBc TYP. @ f = ±50 KHz, EVM = 1.2 %rms TYP.
• EXTERNAL IF FILTER:
Can be applied between modulator output and
up converter input terminal



Application

• Digital cellular phones
(PDC800M, PDC1.5G,TDMA1900 and so on)
• Wireless Communiaction Systems
(MMDS, Broadband wireless access)



Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VCC Supply Voltage V 5.0
VPS/VAGC Power Save & AGC Control V 5.0
PD Power Dissipation2 mW 430
TA Operating Ambient Temp -40 to +85
TSTG Storage Temperature -55 to +150
Note:
1. Operation in excess of any one of these conditions may result in permanent damage.
2. TA = +85



Description

The UPC8158K is a silicon microwave monolithic integrated circuit designed as a quadrature modulator for digital mobile communication systems. This MMIC consist of a 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save functions. This configuration suits IF modulation systems and is packaged in a 28-pin QFN suitable for high density mounting. The chip is manufactured using NEC's 20 GHz fT silicon bipolar process NESATTM III to realize low power consumption. Consequently the UPC8158K can contribute to make RF blocks smaller size, higher performance and lower power consumption.




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