UPC8152TB

Features:

• Supply voltage : VCC = 2.4 to 3.3 V
• Low current consumption : PC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V
                                              PC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V
                                              PC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V
• High efficiency : PC8128TB ; PO_{(1 dB)} = −4.0 dBm TYP. @f = 1 GHz
                            PC8151TB ; PO_{(1 dB)} = +2.5 dBm TYP. @f = 1 GHz
                            PC8152TB ; PO_{(1 dB)} = −4.5 dBm TYP. @f = 1 GHz
• Power gain : PC8128TB, 8151TB ; GP = 12.5 dB TYP. @f = 1 GHz
                                                          PC8152TB ; GP = 23 dB TYP. @f = 1 GHz
• Excellent isolation : PC8128TB ; ISL = 39 dB TYP. @f = 1 GHz
                                                     : PC8151TB ; ISL = 38 dB TYP. @f = 1 GHz
                                                     : PC8152TB ; ISL = 40 dB TYP. @f = 1 GHz
• Operating frequency : 100 to 1 900 MHz (Output port LC matching)
• High-density surface mounting : 6-pin super minimold package (2.0 * 1.25 * 0.9 mm)
• Light weight : 7 mg (Standard value)


Application

• Buffer Amplifiers on 800 to 1 900 MHz cellular or cordless telephones


Pinout




Specifications

Parameter	Symbol	Conditions	Ratings	Unit
Supply Voltage	VCC	TA = +25, Pin 4, Pin 6	3.6	V
Circuit Current	ICC	TA = +25	15	mA
Power Dissipation	PD	Mounted on double-sided copper clad 50 * 50 * 1.6 mm epoxy glass PWB, TA = +85	270	mW
Operating Ambient Temperature	TA		−40 to +85
Storage Temperature	Tstg		−55 to +150
Input Power	Pin	TA = +25	+5	dBm

Description

The PC8128TB, PC8151TB and PC8152TB are silicon monolithic integrated circuits designed as buffer
amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external
chip inductor (eg 1005 size) which can not be realized on internal 50 wideband matched IC. These low current
amplifiers operate on 3.0 V.

These ICs PC8128TB, PC8151TB and PC8152TB are manufactured using NEC's 20 GHz fT NESAT™ III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.