Features: • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical• HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz• LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum• SUPER SMALL PACKAGE• TAPE AND REEL PACKAGING OPTION AVAILABLEPinoutSpecifications SYMBO...
UPC2771T: Features: • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical• HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz• LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum• ...
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Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCC |
Supply Voltage |
V |
3.6 |
ICC |
Total Supply Current |
mA |
77.7 |
PIN |
Input Power |
dBm |
+13 |
PT |
Total Power Dissipation2 |
mW |
280 |
TOP |
Operating Temperature |
-40 to +85 | |
TSTG |
Storage Temperature |
-55 to +150 |
The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt supply, this IC is ideally suited for hand-held, portable designs.
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.