Features: • 7 dBm P1dB TYPICAL AT 1.9 GHz• LOW VOLTAGE: 3 Volts• WIDE BANDWIDTH: 2.9 GHz at -3 dB (UPC2762T)• HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)• SUPER SMALL PACKAGE• TAPE AND REEL PACKAGING OPTION AVAILABLEPinoutSpecifications SYMBOLS PARAMETERS UNIT...
UPC2763T: Features: • 7 dBm P1dB TYPICAL AT 1.9 GHz• LOW VOLTAGE: 3 Volts• WIDE BANDWIDTH: 2.9 GHz at -3 dB (UPC2762T)• HIGH GAIN: 20 dB at 1.9 GHz (UPC2763T)• SUPER SMALL PACKAG...
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Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
SYMBOLS | PARAMETERS | UNITS | RATINGS |
VCC | Supply Voltage | V | 3.6 |
ICC | Total Supply Current | mA | 70 |
PIN | Input Power | dBm | +10 |
PT | Total Power Dissipation2 | mW | 280 |
TOP | Operating Temperature | -40 to +85 | |
TSTG | Storage Temperature | -55 to +150 |
The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless telephone and PCN applications. Operating on a 3 volt supply these ICs are ideally suited for hand-held, portable designs.
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.