Features: • LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V• LOW POWER CONSUMPTION: 15 mW TYP• SUPER SMALL PACKAGE• TAPE AND REEL PACKAGING OPTION AVAILABLEPinoutSpecifications SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V 4.0 ICC Total Supply Current mA...
UPC2747T: Features: • LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V• LOW POWER CONSUMPTION: 15 mW TYP• SUPER SMALL PACKAGE• TAPE AND REEL PACKAGING OPTION AVAILABLEPinoutSpecifications ...
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Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
SYMBOLS | PARAMETERS | UNITS | RATINGS |
VCC | Supply Voltage | V | 4.0 |
ICC | Total Supply Current | mA | 15 |
PIN | Input Power | dBm | 0 |
PT | Total Power Dissipation2 | mW | 280 |
TOP | Operating Temperature | °C | -40 to +85 |
TSTG | Storage Temperature | °C | -55 to +150 |
The UPC2747T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications. Operating on a 3 volt supply (1.8 volt minimum) this IC is ideally suited for handheld, portable designs.
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.