Features: • HIGH GAIN: 15 dB Typical at 400 MHz• WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP• SINGLE POSITIVE DC SUPPLY• SUPER SMALL PACKAGE• TAPE AND REEL PACKAGING OPTION AVAILABLESpecifications SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V 6.0 ...
UPC2726T: Features: • HIGH GAIN: 15 dB Typical at 400 MHz• WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP• SINGLE POSITIVE DC SUPPLY• SUPER SMALL PACKAGE• TAPE AND REEL PACKAGING OPTIO...
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Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
SYMBOLS | PARAMETERS | UNITS | RATINGS |
VCC | Supply Voltage | V | 6.0 |
PIN | Input Power | dBm | 0 |
PT | Total Power Dissipation2 | mW | 280 |
TOP | Operating Temperature | °C | -40 to +85 |
TSTG | Storage Temperature | °C | -55 to +150 |
The UPC2726T is a Silicon RF Integrated Citrcuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz.
This amplifier was designed as a buffer amplifier for circuits requiring differential inputs and outputs for increased commonmode rejection.
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.