UPC2715T

Features: • LOW POWER CONSUMPTION: 15 mW (VCC = 3.4 V, ICC = 4.5 mA)• HIGH POWER GAIN: 20 dB (UPC2715T)• WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T)• INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE• SUPER SMALL PACKAGE• TAPE AND REEL PACKAGING O...

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SeekIC No. : 004537995 Detail

UPC2715T: Features: • LOW POWER CONSUMPTION: 15 mW (VCC = 3.4 V, ICC = 4.5 mA)• HIGH POWER GAIN: 20 dB (UPC2715T)• WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T)• INTERNAL CURRENT REGULATIO...

floor Price/Ceiling Price

Part Number:
UPC2715T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/1/4

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Product Details

Description



Features:

• LOW POWER CONSUMPTION:
  15 mW (VCC = 3.4 V, ICC = 4.5 mA)
• HIGH POWER GAIN: 20 dB (UPC2715T)
• WIDE FREQUENCY RESPONSE:
  2 GHz (UPC2714T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
  CHANGE OVER TEMPERATURE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE



Pinout

  Connection Diagram


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VCC Supply Voltage V 4.0
PIN Input Power dBm -5
PT Total Power Dissipation2 mW 200
TOP Operating Temperature °C -40 to +85
TSTG Storage Temperature °C -55 to +150
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (TA = 85°C).



Description

The UPC2714T and UPC2715T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable for applications which require low power consumption and wide frequency operation. They are designed for low cost, low power consumption gain stages in cellular radios, GPS receivers, and PCN applications.

NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.




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