Features: • LOW POWER CONSUMPTION: 15 mW (VCC = 3.4 V, ICC = 4.5 mA)• HIGH POWER GAIN: 20 dB (UPC2715T)• WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T)• INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE• SUPER SMALL PACKAGE• TAPE AND REEL PACKAGING O...
UPC2714T: Features: • LOW POWER CONSUMPTION: 15 mW (VCC = 3.4 V, ICC = 4.5 mA)• HIGH POWER GAIN: 20 dB (UPC2715T)• WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T)• INTERNAL CURRENT REGULATIO...
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Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
Features: ` Output current in excess of 2.0 A` High accuracy of output voltage VO = ±2% MAX. (TJ =...
SYMBOLS | PARAMETERS | UNITS | RATINGS |
VCC | Supply Voltage | V | 4.0 |
PIN | Input Power | dBm | -5 |
PT | Total Power Dissipation2 | mW | 200 |
TOP | Operating Temperature | °C | -40 to +85 |
TSTG | Storage Temperature | °C | -55 to +150 |
The UPC2714T and UPC2715T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable for applications which require low power consumption and wide frequency operation. They are designed for low cost, low power consumption gain stages in cellular radios, GPS receivers, and PCN applications.
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.