UPC2711T

Features:

• WIDE FREQUENCY RESPONSE: 3 GHz
• HIGH GAIN: 15 dB (UPC2708T)
• SATURATED OUTPUT POWER: +10 dBm (UPC2708T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCC	Supply Voltage	V	6
PIN	Input Power	dBm	+10
PT	Power Dissipation2	mW	280
TOP	Operating Temperature	°C	-40 to +85
TSTG	Storage Temperature	°C	-55 to +150

Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (T_A = +85°C).


Description

The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/ measurement equipment.

NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.