Maximum Operating Frequency
:
Packaging
:
Configuration
: Single
Transistor Polarity
: NPN
Emitter- Base Voltage VEBO
: 2 V
Collector- Emitter Voltage VCEO Max
: 4.5 V
Continuous Collector Current
: 0.075 A
Power Dissipation
: 0.410 W
Maximum Operating Temperature
: + 85 C
Package / Case
: TU
DescriptionThe UPA901TU-A is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain,low power consumption.This device is fabricated with our SiGe HBT process UHS2-HV technology.
Features of the UPA901TU-A are:(1)putput power:Pout=19dBm @ pin=−3dBm,VCE=3.6V,f=5.8GHz;(2)low power:IC=90mA @ Pin=−3dBm,VCE=3.6V,f=5.8GHz;(3)single power supply operation:VCE=3.6V;(4)built-in bias circuit;(5)8-pin lead-less minimold:(2.0 * 2.2 * 0.5 mm).
The absolute maximum ratings of the UPA901TU-A can be summarized as:(1):the parameter is collector to base voltage,the symbol is VCBO,the rating is 15,the unit is V;(2):the parameter is collector to emitter voltage,the symbol is VCEO,the rating is 4.5,the unit is V;(3):the parameter is emitter to base voltage,the symbol is VEBO,the rating is 2,the unit is V;(4):the parameter is collector current of Q1,the symbol is IC1,the rating is 75,the unit is mA;(5):the parameter is collector current of Q2,the symbol is IC2,the rating is 250,the unit is mA;(6):the parameter is bias current,the symbol is IBIAS,the rating is 25,the unit is mA;(7):the parameter is total power dissipation,the symbol is Ptot,the rating is 410,the unit is mW;(8):the parameter is junction temperature,the symbol is Tj,the rating is 150,the unit is ;(9):the parameter is storage temperature,the symbol is Tstg,the rating is -65 to 150,the unit is ;(10):the parameter is operating ambient temperature,the symbol is TA,the rating is -40 to +85,the unit is .
Parameters: | Technical/Catalog Information | UPA901TU-A |
| Vendor | NEC |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 5.8GHz |
| Noise Figure (dB Typ @ f) | - |
| Current - Collector (Ic) (Max) | 75mA, 250mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 6mA, 3V, 80 @ 20mA, 3V |
| Transistor Type | 2 NPN (Dual) |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| Gain | - |
| Power - Max | 410mW |
| Compression Point (P1dB) | - |
| Package / Case | 8-MINIMOLD |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | UPA901TU A
UPA901TUA
|
UPA901TU-A Data Sheet
