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UPA2790GR

Features: • Low on-state resistance N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m MAX. (VGS = −10 V, ID = −3 A) RDS(on)2 = 80 m MAX. (VGS = −4.5 V, ID = −3 A)• Low input capacitance N...

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UPA2790GR: Features: • Low on-state resistance N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m MAX. (VGS = −10 V, ID = &...

UPA2790GR Data Sheet

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Part Number:
UPA2790GR
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance
   N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A)
   RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A)
   P-channel RDS(on)1 = 60 m MAX. (VGS = −10 V, ID = −3 A)
   RDS(on)2 = 80 m MAX. (VGS = −4.5 V, ID = −3 A)
• Low input capacitance
   N-channel Ciss = 500 pF TYP.
   P-channel Ciss = 460 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)


Specifications

PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL

UNIT

Drain to source voltage(VGS = 0 V)
VDSS
30
-30
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
±20
V
Drain current(DC)
ID(DC)
±6
±6
A
Drain peak current(Pulse)1
ID(pulse)
±24
±24
A
Total Power Dissipation (1 unit)2
PT
1.7
W
Total Power Dissipation (2 unit)2
PT
2.0
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Single Avalanche Current 3
IAS
6
-6
A
Single Avalanche Energy 3
EAS
3.6
3.6
mJ
Notes 1. PW 10 s, Duty Cycle 1%
          2. Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
          3. Starting Tch = 25°C, VDD =1/2x VDSS, RG = 25 , L = 100 H, VGS = VGSS 0 V


Description

The UPA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application.


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