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UPA2707GR

Features: • Low on-state resistance RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)• Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V)• Small and surface mount package (Power SOP8)Specifications Drain to Source...

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SeekIC No. : 004537877 Detail

UPA2707GR: Features: • Low on-state resistance RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)• Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 ...

UPA2707GR Data Sheet

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Part Number:
UPA2707GR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance
   RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A)
   RDS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)
• Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power SOP8)


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 30 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) ID(DC) ±19 A
Drain Current (pulse) Note1 ID(pulse) ±76 A
Total Power Dissipation Note2 PT1 1.1 W
Total Power Dissipation (PW = 10 sec) Note2 PT2 2.5 W
Channel Temperature Tch 150
Storage Temperature Tstg −55 to +150
Single Avalanche Current Note3 IAS 19 A
Single Avalanche Energy Note3 EAS 36 mJ

Notes 1. PW 10 µs, Duty Cycle 1%
          2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
          3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 0 V


Description

The UPA2707GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer.




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