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UPA2510

Features: • PA2510 has a thin surface mount package with a heat spreader. The land size is same as 8-pin TSSOP.• Low on-state resistance RDS(on)1 = 10.1 m MAX. (VGS = −10.0 V, ID = −9.0 A) RDS(on)2 = 14.0 m MAX. (VGS = −4.5 V, ID = −9.0 A)• Low Ciss: 3000...

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SeekIC No. : 004537876 Detail

UPA2510: Features: • PA2510 has a thin surface mount package with a heat spreader. The land size is same as 8-pin TSSOP.• Low on-state resistance RDS(on)1 = 10.1 m MAX. (VGS = −10.0 V, ID ...

UPA2510 Data Sheet

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Part Number:
UPA2510
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• PA2510 has a thin surface mount package with a heat spreader. The land size is same as 8-pin TSSOP.
• Low on-state resistance
   RDS(on)1 = 10.1 m MAX. (VGS = −10.0 V, ID = −9.0 A)
   RDS(on)2 = 14.0 m MAX. (VGS = −4.5 V, ID = −9.0 A)
• Low Ciss: 3000 pF TYP. (VDS = −10.0 V, VGS = 0 V)


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage(VGS = 0 V)
VDSS
-30.0
V
Gate to source voltage(VDS = 0 V)
VGSS
±20.0
V
Drain current(DC)1
ID(DC)
±18.0
A
Drain peak current(Pulse)2
ID(pulse)
±72.0
A
Total Power Dissipation 1
PT
2.7
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Single Avalanche Current 3
IAS
-18.0
A
Single Avalanche Energy 3
EAS
32.4
mJ

Notes 1. Mounted on FR-4 board of 25 cm2 x 1.6 mm, PW 10 sec
          2. PW 10 s, Duty Cycle 1%
          3. Starting Tch = 25°C, VDD = −30 V, RG = 25 , VGS = −20.0 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.




Description

The UPA2510, which has a heat spreader, is P-channel MOS Field Effect Transistor designed for power management
applications of notebook computers




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