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UPA1760

Features: · Dual Chip Type· Low On-Resistance RDS(on)1 = 26.0 mW MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 36.0 mW MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 42.0 mW MAX. (VGS = 4.0 V, ID = 4.0 A)· Low Ciss : Ciss = 760 pF TYP.· Built-in G-S Protection Diode· Small and Surface Mount Package (Power S...

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SeekIC No. : 004537866 Detail

UPA1760: Features: · Dual Chip Type· Low On-Resistance RDS(on)1 = 26.0 mW MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 36.0 mW MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 42.0 mW MAX. (VGS = 4.0 V, ID = 4.0 A)· Lo...

UPA1760 Data Sheet

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Part Number:
UPA1760
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Dual Chip Type
· Low On-Resistance
    RDS(on)1 = 26.0 mW MAX. (VGS = 10 V, ID = 4.0 A)
    RDS(on)2 = 36.0 mW MAX. (VGS = 4.5 V, ID = 4.0 A)
    RDS(on)3 = 42.0 mW MAX. (VGS = 4.0 V, ID = 4.0 A)
· Low Ciss : Ciss = 760 pF TYP.
· Built-in G-S Protection Diode
· Small and Surface Mount Package (Power SOP8)



Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 unit) Note2
Channel Temperature
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3		 V DSS
V GSS
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
I AS
EAS		 30
±20
±8.0
±32
1.7
2.0
150
55 to + 150
8
6.4		 V
V
A
A
W
W
°C
°C
A
mJ

Notes 1. PW £ 10 ms, Duty cycle £ 1 %
          2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm2 x 1.6 mm
          3. Starting Tch = 25 °C, RG = 25 W, VGS = 20 V ® 0 V


Description

The UPA1760 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.




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