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UPA1759

Features: · Dual chip type· Low on-resistance RDS(on)1 = 110 mW TYP. (VGS = 10 V, ID = 2.5 A) RDS(on)2 = 170 mW TYP. (VGS = 4 V, ID = 2.5 A)· Low input capacitance Ciss = 190 pF TYP.· Built-in G-S protection diode· Small and surface mount package (Power SOP8)Specifications Drain to Source Vol...

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SeekIC No. : 004537865 Detail

UPA1759: Features: · Dual chip type· Low on-resistance RDS(on)1 = 110 mW TYP. (VGS = 10 V, ID = 2.5 A) RDS(on)2 = 170 mW TYP. (VGS = 4 V, ID = 2.5 A)· Low input capacitance Ciss = 190 pF TYP.· Built-in G-S p...

UPA1759 Data Sheet

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Part Number:
UPA1759
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Dual chip type
· Low on-resistance
    RDS(on)1 = 110 mW TYP. (VGS = 10 V, ID = 2.5 A)
    RDS(on)2 = 170 mW TYP. (VGS = 4 V, ID = 2.5 A)
· Low input capacitance Ciss = 190 pF TYP.
· Built-in G-S protection diode
· Small and surface mount package (Power SOP8)


Specifications

Drain to Source Voltage (VGS = 0)
Gate to Source Voltage (VDS = 0)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit)Note2
Total Power Dissipation (2unit)Note2
Channel Temperature
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3		 VDSS
VGSS
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
IAS
EAS		 60
±20
±5.0
±20
1.7
2.0
150
55 to + 150
2.5
0.625		 V
V
A
A
W
W
°C
°C
A
mJ

Notes 1. PW £ 10 ms, Duty cycle £ 1 %
          2. Mounted on ceramic substrate of 1200 mm2 x 1.7 mm
          3. Starting Tch = 25 °C, RG = 25 W, VGS = 20 V ® 0 V


Description

This product UPA1759 is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters.


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