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UPA1730

Features: ` Low on-resistance RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 6.5 A) RDS(on)2 = 13.5 m MAX. (VGS = 4.5 V, ID = 6.5 A) RDS(on)3 = 15.0 m MAX. (VGS = 4.0 V, ID = 6.5 A)` Low Ciss : Ciss = 3800 pF TYP.` Built-in G-S protection diode` Small and surface mount package (Power SOP8)SpecificationsD...

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SeekIC No. : 004537863 Detail

UPA1730: Features: ` Low on-resistance RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 6.5 A) RDS(on)2 = 13.5 m MAX. (VGS = 4.5 V, ID = 6.5 A) RDS(on)3 = 15.0 m MAX. (VGS = 4.0 V, ID = 6.5 A)` Low Ciss : Ciss = 3800...

UPA1730 Data Sheet

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Part Number:
UPA1730
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Low on-resistance
    RDS(on)1 = 9.5 m MAX. (VGS = 10 V, ID = 6.5 A)
    RDS(on)2 = 13.5 m MAX. (VGS = 4.5 V, ID = 6.5 A)
    RDS(on)3 = 15.0 m MAX. (VGS = 4.0 V, ID = 6.5 A)
` Low Ciss : Ciss = 3800 pF TYP.
` Built-in G-S protection diode
` Small and surface mount package (Power SOP8)


Specifications

Drain to Source Voltage (VGS = 0 V)               VDSS    30 V
Gate to Source Voltage (VDS = 0 V)                VGSS     + 20 V
Drain Current (DC)                                         ID(DC)    + 13.0 A
Drain Current (pulse) Note1                            ID(pulse) + 52.0 A
Total Power Dissipation (TA = 25°C) Note2    PT           2.2 W
Channel Temperature                                    Tch         150 °C
Storage Temperature                                    Tstg        55 to +150 °C


Description

The UPA1730 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.




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