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UPA1717

Features: · Low on-state resistance RDS(on)1 = 33 mW MAX. (VGS = -10 V, ID = -3 A) RDS(on)2 = 59 mW MAX. (VGS = -4.5 V, ID = -3 A)· Low Ciss : Ciss = 830 pF TYP.· Built-in G-S protection diode· Small and surface mount package (Power SOP8)Specifications VDSSVGSSID(DC)ID(pulse)P TTchTstg Drain...

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SeekIC No. : 004537862 Detail

UPA1717: Features: · Low on-state resistance RDS(on)1 = 33 mW MAX. (VGS = -10 V, ID = -3 A) RDS(on)2 = 59 mW MAX. (VGS = -4.5 V, ID = -3 A)· Low Ciss : Ciss = 830 pF TYP.· Built-in G-S protection diode· Smal...

UPA1717 Data Sheet

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Part Number:
UPA1717
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low on-state resistance
    RDS(on)1 = 33 mW MAX. (VGS = -10 V, ID = -3 A)
    RDS(on)2 = 59 mW MAX. (VGS = -4.5 V, ID = -3 A)
· Low Ciss : Ciss = 830 pF TYP.
· Built-in G-S protection diode
· Small and surface mount package (Power SOP8)


Specifications

VDSS
VGSS
ID(DC)
ID(pulse)
P T
Tch
Tstg		 Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
Channel Temperature
Storage Temperature		 -30
# 25
# 6
# 24
2.0
150
55 to +150		 V
V
A
A
W
°C
°C

Notes 1. PW £ 10 ms, Duty Cycle £ 1 %
           2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm


Description

The UPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers.




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