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UPA1715

Features: ` Low on-resistance RDS(on)1 = 8.5 mW TYP. (VGS = 10 V, ID = 6.0 A) RDS(on)2 = 11.0 mW TYP. (VGS = 4.5 V, ID = 6.0 A) RDS(on)3 = 12.0 mW TYP. (VGS = 4.0 V, ID = 6.0 A)` Low Ciss : Ciss = 3800 pF TYP.` Built-in G-S protection diode` Small and surface mount package (Power SOP8)Specificatio...

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SeekIC No. : 004537860 Detail

UPA1715: Features: ` Low on-resistance RDS(on)1 = 8.5 mW TYP. (VGS = 10 V, ID = 6.0 A) RDS(on)2 = 11.0 mW TYP. (VGS = 4.5 V, ID = 6.0 A) RDS(on)3 = 12.0 mW TYP. (VGS = 4.0 V, ID = 6.0 A)` Low Ciss : Ciss = 3...

UPA1715 Data Sheet

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Part Number:
UPA1715
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

` Low on-resistance
   RDS(on)1 = 8.5 mW TYP. (VGS = 10 V, ID = 6.0 A)
   RDS(on)2 = 11.0 mW TYP. (VGS = 4.5 V, ID = 6.0 A)
   RDS(on)3 = 12.0 mW TYP. (VGS = 4.0 V, ID = 6.0 A)
` Low Ciss : Ciss = 3800 pF TYP.
` Built-in G-S protection diode
` Small and surface mount package (Power SOP8)


Specifications

Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
Channel Temperature
Storage Temperature		 V DSS
V GSS
ID(DC)
ID(pulse)
P T
Tch
Tstg		 30
20
11
44
2.0
150
55 to+150
 V
V
A
A
W
°C
°C

Notes
1. PW £ 10 m s, Duty Cycle £ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 0.7 mm


Description

This product UPA1715 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook
computers and Li-ion battery protection circuit.




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