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UPA1706TP

Features: • Low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)• Low Ciss: Ciss = 3000 pF TYP. (VDS = 10 V, VGS = 0 V)• Small and surface mount package (Power HSOP8)Specifications Drain to Sour...

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SeekIC No. : 004537859 Detail

UPA1706TP: Features: • Low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)• Low Ciss: Ciss = 3000 pF TYP. (VDS = 10...

UPA1706TP Data Sheet

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Part Number:
UPA1706TP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance
   RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A)
   RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)
• Low Ciss: Ciss = 3000 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)


Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 unit) Note2
Channel Temperature
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3		 V DSS
V GSS
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
I AS
EAS		 30
±20
±28
±17
±100
39
3
150
55 to + 150
19
36.1		 V
V
A
A
W
W
°C
°C
A
mJ

Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
          2. PW 10 µs, Duty cycle 1%
          3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 0 V


Description

The UPA1706TP which has a heat spreader is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer.




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