Features: ` Extremely low collector-emitter saturation voltage V CE(SAT) and corresponding extremely low equivalent on-resistance R CE(SAT) (97m at 1.5A)` High collector current capability(1.5A)` High peak pulse current up to 6A` High collector current gainSpecifications Parameter Symbol...
UP2518: Features: ` Extremely low collector-emitter saturation voltage V CE(SAT) and corresponding extremely low equivalent on-resistance R CE(SAT) (97m at 1.5A)` High collector current capability(1.5A)` Hi...
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` Extremely low collector-emitter saturation voltage V CE(SAT) and corresponding extremely low equivalent on-resistance R CE(SAT) (97m at 1.5A)
` High collector current capability(1.5A)
` High peak pulse current up to 6A
` High collector current gain
Parameter |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
20 |
V |
Collector-Emitter Voltage |
VCEO |
20 |
V |
Emitter-Base Voltage |
VEBO |
5 |
V |
Peak Pulse Current (Note 2) |
IPEAK |
6 |
A |
Continuous Collector Current |
IC |
1.5 |
A |
Base Current |
IB |
500 |
mA |
Power Dissipation at Ta =25°C(Note 3) |
PD |
625 |
mW |
Junction temperature |
Tj |
+150 |
|
Storage temperature |
Tstg |
-40~+150 |
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300ms. Duty cycle2%
3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm