Features: • High-speed switching• Gate protection diode built-in• Two elements incorporated into one package(Each transistor is separated)• Reduction of the mounting area and assembly cost by one halfSpecifications Parameter Rating SYMBOL UNIT Tr1 Coll...
UP04979: Features: • High-speed switching• Gate protection diode built-in• Two elements incorporated into one package(Each transistor is separated)• Reduction of the mounting area and...
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Parameter |
Rating |
SYMBOL |
UNIT | |
Tr1
|
Collector-base voltage (Emitter open) |
50 |
VCBO |
V |
Collector-emitter voltage (Base open) |
±7 |
VCEO |
V | |
Collector current |
100 |
IC |
mA | |
Peak drain current |
200 | |||
Tr2
|
Collector-base voltage Emitter open) |
-30 |
VCBO |
V |
Collector-emitter voltage (Base open) |
±7 |
VCEO |
V | |
Collector current |
-100 |
IC |
mA | |
Peak drain current |
-200 | |||
Overall
|
Total power dissipation |
125 |
P |
mW |
Junction temperature |
125 |
Tj |
°C | |
Overall |
Storage temperature |
−55 to +125 |
Tstg |
°C |