Features: ·High-speed switching·Incorporating a built-in gate protection-diode·Two elements incorporated into one package (Each transistor is separated)· SSMini type package, reduction of the mounting area and assembly costSpecifications Parameter Symbol Rating Unit Drain-source...
UP0487C: Features: ·High-speed switching·Incorporating a built-in gate protection-diode·Two elements incorporated into one package (Each transistor is separated)· SSMini type package, reduction of the mounti...
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Parameter |
Symbol |
Rating |
Unit |
Drain-source surrender voltage |
VDSS |
20 |
V |
Gate-source voltage (Drain open) |
VGSO |
±12 |
V |
Drain current |
ID |
100 |
mA |
Peak drain current |
IDP |
200 |
mA |
Total power dissipation |
PT |
120 |
mW |
Channel temperature |
Tch |
120 |
°C |
Storage temperature |
Tstg |
−55 to +125 |
°C |