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UNR42160RA

TRANS NPN W/RES 210 HFE NS-B1

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SeekIC No. : 003437130 Detail

UNR42160RA: TRANS NPN W/RES 210 HFE NS-B1

UNR42160RA Data Sheet

floor Price/Ceiling Price

US $ .07~.25 / Piece | Get Latest Price
Part Number:
UNR42160RA
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.25
  • $.16
  • $.13
  • $.11
  • $.09
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
Transistor Type: NPN - Pre-Biased Clamping Voltage : 13.5 V
Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz
Power - Max: 300mW Mounting Type: Through Hole
Package / Case: NS-B1 Supplier Device Package: NS-B1    

Description

Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Emitter Base (R2) (Ohms): -
Packaging: Cut Tape (CT)Alternate Packaging
Resistor - Base (R1) (Ohms): 4.7k
Current - Collector Cutoff (Max): 500nA
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1


Parameters:

Technical/Catalog InformationUNR42160RA
VendorPanasonic - SSG
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max300mW
Resistor - Base (R1) (Ohms)4.7K
Resistor - Emitter Base (R2) (Ohms)-
Vce Saturation (Max) @ Ib, Ic250mV @ 300A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Frequency - Transistion150MHz
Mounting TypeSurface Mount
Package / CaseNS-B1
PackagingTape & Box (TB)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names UNR42160RA
UNR42160RA
UNR42160RATB ND
UNR42160RATBND
UNR42160RATB



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