UNR411E00A

TRANS PNP W/RES 60HFE NS-B1

product image

UNR411E00A Picture
SeekIC No. : 003437096 Detail

UNR411E00A: TRANS PNP W/RES 60HFE NS-B1

floor Price/Ceiling Price

US $ .09~.25 / Piece | Get Latest Price
Part Number:
UNR411E00A
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • Unit Price
  • $.25
  • $.16
  • $.13
  • $.11
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA
Series : CDNBS08-SLVU2.8-4 Frequency - Transition: 80MHz
Power - Max: 300mW Mounting Type: Through Hole
Package / Case: NS-B1 Supplier Device Package: NS-B1    

Description

Series: -
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Transistor Type: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 500nA
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: NS-B1
Supplier Device Package: NS-B1


Parameters:

Technical/Catalog InformationUNR411E00A
VendorPanasonic - SSG (VA)
CategoryDiscrete Semiconductor Products
Transistor TypePNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max300mW
Resistor - Base (R1) (Ohms)47K
Resistor - Emitter Base (R2) (Ohms)22K
Vce Saturation (Max) @ Ib, Ic250mV @ 300A, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Frequency - Transistion80MHz
Mounting TypeSurface Mount
Package / CaseNS-B1
PackagingCut Tape (CT)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names UNR411E00A
UNR411E00A
UNR411E00ACT ND
UNR411E00ACTND
UNR411E00ACT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Cables, Wires - Management
Prototyping Products
DE1
Static Control, ESD, Clean Room Products
View more