Transistors Bipolar (BJT) 200mA 60V Dual Complementary
UMZ1NT1G: Transistors Bipolar (BJT) 200mA 60V Dual Complementary
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Transistor Polarity : | NPN, PNP | Collector- Emitter Voltage VCEO Max : | 50 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 0.2 A |
DC Collector/Base Gain hfe Min : | 200 at 2 mA at 6 V | Configuration : | Dual |
Maximum Operating Frequency : | 114 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SC-88 |
Packaging : | Reel |
Technical/Catalog Information | UMZ1NT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN + PNP (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 200mA |
Power - Max | 385mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Frequency - Transition | 114MHz |
Current - Collector Cutoff (Max) | 1mA |
Mounting Type | Surface Mount |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | UMZ1NT1G UMZ1NT1G UMZ1NT1GOSTR ND UMZ1NT1GOSTRND UMZ1NT1GOSTR |