Transistors Switching (Resistor Biased) 100mA Complementary
UMC3NT1: Transistors Switching (Resistor Biased) 100mA Complementary
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Configuration : | Dual Common Base and Collector | Transistor Polarity : | PNP | ||
Typical Input Resistor : | 10 KOhms | Typical Resistor Ratio : | 1 | ||
Mounting Style : | SMD/SMT | Package / Case : | SC-88A/SOT-353 | ||
Collector- Emitter Voltage VCEO Max : | 50 V | Continuous Collector Current : | 100 mA | ||
Peak DC Collector Current : | 100 mA | Power Dissipation : | 150 mW | ||
Maximum Operating Temperature : | + 150 C | Packaging : | Reel |
Parameter |
VALUE |
SYMBOL |
UNIT |
Collector-Base Voltage |
50 |
VCBO |
Vdc |
Collector-Emitter Voltage |
50 |
VCEO |
Vdc |
Collector Current |
100 |
IC |
mAdc |
The UMC3NT1 Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two complementary BRT devices are housed in the SOT−353 package which is ideal for low power surface mount applications where board space is at a premium.
Technical/Catalog Information | UMC3NT1 |
Vendor | ON Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | SOT-353 |
Transistor Type | NPN + PNP |
Collector Emitter Voltage (Vceo) | 50.0 V [Max] |
Collector Base Voltage (Vcbo) | 50.0 V [Max] |
Collector Current (Ic) | 100.00 mA [Max] |
Built-In Resistor (RB) | 10.000 kOhms [Typ] |
Built-In Resistor (RBE) | 10.0 kOhms [Typ] |
Power Dissipation | 150.000 mW [Max] |
Packaging | Tape & Reel |
Has Digi-Reel | FALSE |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | UMC3NT1 UMC3NT1 UMC3NT1OS ND UMC3NT1OSND UMC3NT1OS |