UM9441

Features: ·High Photocurrent Sensitivity·High Reliability Construction·Fast Rise Time·Wide Dynamic Range·Hardness to Neutron Bombardment·Low operating VoltageApplication·Surface Mount package available·RoHS compliant devices availableSpecifications Rating Symbol Value Unit Reverse Volta...

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UM9441 Picture
SeekIC No. : 004537196 Detail

UM9441: Features: ·High Photocurrent Sensitivity·High Reliability Construction·Fast Rise Time·Wide Dynamic Range·Hardness to Neutron Bombardment·Low operating VoltageApplication·Surface Mount package availa...

floor Price/Ceiling Price

Part Number:
UM9441
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2025/1/6

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Product Details

Description



Features:

·High Photocurrent Sensitivity
·High Reliability Construction
·Fast Rise Time
·Wide Dynamic Range
·Hardness to Neutron Bombardment
·Low operating Voltage



Application

·Surface Mount package available
·RoHS compliant devices available



Specifications

Rating Symbol Value Unit
Reverse Voltage VR 100 V
Photocurrent   3Adc 3A2s pulsed
Storage Temperature Tstg -55 to +200
Operating Temperature Top -55 to +175



Description

Silicon PIN devices are effective detectors of nuclear and electromagnetic radiation. This includes gamma radiation, electrons, and X-rays. The detectors can be used across the temperature range of -55 to +175 instead of being restricted to use at low temperatures.

The absorbed radiation produces electron-hole pairs in the space charge region. These charges are swept out by the applied field and result in a current flow proportional to the rate of absorbed radiation. The Microsemi UM9441 series utilizes high resistivity material and is designed to have a uniform area mesa structure to define the active volume.

The current sensitivity of this device is proportional only to the I-region volume and is independent of temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no degradation in gamma sensitivity resulting from a total dose of 1014 neutrons/cm2 of 1 MeV equivalent.

Package The UM9441 is an axially leaded device constructed by metallurgically bonding the PIN chip in between two molybdenum refractory pins that are typically 0.125 inches in diameter and 0.050 inches long. Hyper-pure glass is then fused over this bond to form a void less seal. Leads are then brazed to ends of molybdenum pins. This results in a high-reliability package using materials so well thermally matched that the UM9441 can withstand temperature shk or cycling from -196 to +300 .




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