Features: `Voltage Ratings to 1400 Volt `Fully Passivated PIN Chip `Low Leakage, IR < 0.5 A `Void Less, Particle Free Construction `Hermetic Fused in Glass `Low Loss, Low Distortion `Surface Mount Package Available...
UM7500: Features: `Voltage Ratings to 1400 Volt `Fully Passivated PIN Chip `Low Leakage, IR < 0.5 A `Void Less, Particle Free Construction `Hermetic Fus...
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Package | Condition | PD |
A | 25 Pin Temperature | 10 W 15 /W |
B & E | ½ in. total length to 25 Contact Free Air |
5.5 W 27.5 /W 1.5 W |
C | 25 Stud Temperature | 10 W 15 /W |
D | 25 Stud Temperature | 7.5 W 20 /W |
SM | 25 End Cap Temperature | 7.5 W 20 /W |
All | 1 us pulse (Single) | 35 kW |
OPERATING AND STORAGE TEMPERATURE RANGE |
-65 to + 175 |
The UM7500 series features Microsemi's innovative passivated chip design which takes advantage of the latest silicon wafer bonding and junction passivation techniques. This new series of PIN diodes incorporates all of the desirable RF properties of previous Microsemi diodes plus extremely low leakages and very stable reverse characteristics. Power dissipation capability is assured by Microsemi's metallurgically bonded, fused in glass construction. This technique continues to be the optimum approach for applications requiring reliable, high power diodes.
Low leakage distortion is achieved by maintaining high carrier lifetime and accurately controlling I-region thickness throughout the process. The UM7500 series is designed for use in a broad range of RF and microwave switch and attenuator circuits. The packages make this series suitable for many high-end medical applications such as MRI and CAT scan equipment. For military applications, the new series is capable of meeting all the requirements of MIL STD-750 including HTRB screening at 80% of rated voltage at 150 .