MOSFET 2N-CH 30V .1A SOT-363
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.1 A |
Resistance Drain-Source RDS (on) : | 8000 mOhms at 4 V | Configuration : | Dual |
Mounting Style : | SMD/SMT | Package / Case : | UMT-6 |
Packaging : | Reel |
Technical/Catalog Information | UM6K1NTN |
Vendor | Rohm Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 100mA |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
Input Capacitance (Ciss) @ Vds | 13pF @ 5V |
Power - Max | 150mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | UM6K1NTN UM6K1NTN UM6K1NTNTR ND UM6K1NTNTRND UM6K1NTNTR |