Features: · Extremely low distortion performance· Useful frequency range extends below 500 kHz· Power dissipation to 20 W (UM4300)· Capacitance as low as 0.7 pF (UM7300)· Voltage ratings to 1000V· Non cavity design· Thermally ma...
UM4300: Features: · Extremely low distortion performance· Useful frequency range extends below 500 kHz· Power dissipation to 20 W (UM4300)· Capacitance as low as 0.7 ...
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Package | Condition | UM4300 | UM7300 |
PD | PD | ||
A | 25 Pin Temperature | 20 W 7.5 /W | 7.5 W 20 /W |
B & E | ? in. total length to 25 OC Contact Free Air |
10 W 15 /W 2.5 W |
4 W 37.5 /W |
C | 25 Stud Temperature | 20 W 7.5 /W | 7.5 W 20 /W |
D | 25 Stud Temperature | 15 W 10 /W | 6 W 25 /W |
SM | 25 End Cap Temperature | 15 W 20 /W | 5.5 W 18 /W |
All | 1 us pulse (Single) | 500 kW | 100 kW |
The UM4300 and UM7300 series combine a diode chip of extremely thick intrinsic region with a low thermal resistance construction. This results in diodes uniquely applicable to very low distortion linear attenuators and specialized functions. The UM4300 series, with large cross-sectional chip area offers the highest power capability, of the two series. The UM7300 series offers lower capacitance.
Both diode series are intended for use in linear attenuators operating from HF to beyond 1 GHz.
Low distortion is a result of transit time frequencies below 5 MHz.
Operated as RF switches, either diode series can be operated at low dc reverse bias voltages, to hold off much higher RF voltage levels.