Features: · LF band (100 KHz) PIN· Long Lifetime (80 ms typ.)· High Power (1 KW CW) · High Isolation (35 dB)· Low Loss (0.2 dB) · Very Low Distortion (IP3 = > 60 dBm)· Voltage Ratings to 1000 VSpecifications Test Min. Typ. Max. Units Conditions Diode Resistance RS ...
UM2300: Features: · LF band (100 KHz) PIN· Long Lifetime (80 ms typ.)· High Power (1 KW CW) · High Isolation (35 dB)· Low Loss (0.2 dB) · Very Low Distortion (IP3 = > 60 dBm)· Voltage Ratings to 1000 VSp...
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Test |
Min. |
Typ. |
Max. |
Units |
Conditions |
Diode Resistance RS |
0.3 |
0.4 |
F1 = 1 MHz, 100 mA | ||
Capacitance CT |
15 |
20 |
pF |
F2 = 1 MHz, 100 V | |
Reverse Current IR |
10 |
uA |
@ Rated Voltage | ||
Carrier Lifetime |
60 |
80 |
us |
If = 10 mA / 100 V | |
IP3 |
50 |
60 |
dBm |
2 WATT total, If = 25 mA | |
F1 = 0.999 MHz, F2 = 1.001 MHz | |||||
1.0 WATT/ tone | |||||
Thermal Resistance |
1.0 |
/W |
25°C Stud Temperature |
UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less than 0.2 dB and isolation is greater than 35 dB ('off 'state).
The UM2300 series offers the lowest distortion perform- ance in both transmit & receive modes. Less than 10 mA forward bias is required to obtain an IP3 of 60 dBm at 150 KHz with 1 watt per tone. The forward biased resistance/reactance vs. frequency characteristics are flat down to 10 KHz. Capacitance vs. reverse bias volt-
age characteristic is flat down to 1 MHz.
In attenuator configurations, the UM2300 produces extremely low distortion at low values of attenuator control current, & very low insertion loss ( 0.2 dB) in
the ' 0 dB ' attenuator state.