Features: ·Fast switching times·Improved inductive ruggedness·High forward transfer admittance·Low on resistance·Low leakage current·Lower input capacitanceSpecifications PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage VDSS 600 V Continuous Drain Current ID 10 A Pulsed...
UK2996: Features: ·Fast switching times·Improved inductive ruggedness·High forward transfer admittance·Low on resistance·Low leakage current·Lower input capacitanceSpecifications PARAMETER SYMBOL RAT...
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PARAMETER | SYMBOL | RATINGS | UNIT |
Drain to Source Voltage | VDSS | 600 | V |
Continuous Drain Current | ID | 10 | A |
Pulsed Drain Current | IDM | 30 | A |
Drain to Gate Voltage (RGS = 20 k) | VDGR | 600 | V |
Gate to Source Voltage | VGSS | ±30 | V |
Avalanche Current | IAR | 10 | A |
Single Pulsed Avalanche energy (Note 2) | EAS | 252 | mJ |
Repetitive Avalanche Energy (Note 3) | EAR | 4.5 | mJ |
Total Power Dissipation (Tc = 25) | PD | 45 | W |
Operating Temperature Range | TJ | -55 ~ +150 | `` |
Storage Temperature | TSTG | -55 ~ +150 | `` |
The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM motor drive controls.