DescriptionThe UHVP802 is designed as one member of the HV plus series rectifiers which have high reliability and high frequency. It is ideally suited for applications requiring high blocking voltage. It has the ability to switch significant current with minimal switching transients and losses. Le...
UHVP802: DescriptionThe UHVP802 is designed as one member of the HV plus series rectifiers which have high reliability and high frequency. It is ideally suited for applications requiring high blocking voltag...
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The UHVP802 is designed as one member of the HV plus series rectifiers which have high reliability and high frequency. It is ideally suited for applications requiring high blocking voltage. It has the ability to switch significant current with minimal switching transients and losses. Leakage current at high temperature has been minimized, achieveing exceptionally low reverse losses.
UHVP802 has six features. (1)Ultra fast recovery 35ns. (2)Controlled avalanche. (3)It has high temperature operation with low loss. (4)Minimal recovery transients. (5)Low trun-on voltage. (6)TO-220AC package. Those are all the main features.
Some absolute maximum ratings of UHVP802 have been concluded into several points as follow. (1)Its peak reverse voltage would be 200V. (2)Its average DC output current at Tc=130°C would be 8A. (3)Its peak forward surge current 8.3ms would be 100A. (4)Its thermal resistance junction to case would be 2.2°C/W. (5)Its operating temperature range would be from -55°C to 150°C. (6)Its storage temperature range would be from -55°C o 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of UHVP802 are concluded as follow. (1)Its forward voltage would be 1.35V at 4.0A and would be 1.5V at 8.0A and would be 1.2V at 8.0A at Tc=125°C. (2)Its reverse current would be 10uA at Vr=rated voltage and would be 250uA at Vr=rated voltage and Tc=125°C. (3)Its reverse recovery time would be 35ns. (4)Its tlRM would be 35ns typical with conditions of If=8A and di/dt=100A/us. (5)Its IRM would be 3.5A typical with conditions of If=8A and di/dt=100A/us. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please visit our website and contact us for details. Thank you!