Features: • Oxide planar chip junction• Ultrafast recovery times• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capability• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder ...
UH20FCT: Features: • Oxide planar chip junction• Ultrafast recovery times• Soft recovery characteristics• Low switching losses, high efficiency• High forward surge capability...
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PARAMETER |
SYMBOL |
UH20FCT |
UHB20FCT |
UNIT |
Maximum repetitive peak reverse voltage |
VRRM |
300 |
V | |
Maximum average forward rectified per device current (Fig. 1) per diode |
IF(AV) |
20 10 |
A | |
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM |
180 |
A | |
Operating junction and storage temperature range |
TJ, TSTG |
- 55 to + 150 |