UGN-3076T

The UGN-3076T has the following features including Operable with Inexpensive Multipole Ring Magnets;High Reliability-No Moving Parts;Small Size;Output Compatible with All Digital Logic Families;Symmetrical Output;High Hysteresis Level Minimizes Stray-Field Problems.

THESE SOLID-STATE, magnetically-activated latches, designed for use with brushless d-c motors and inexpensive multipole ring magnets, operate as effective, reliable interface between electromechanical equipment and bipolar or MOS logic circuits at switching frequencies of up to 100 kHz.The bipolar output of these devices saturates when the Hall cell is exposed to a magnetic flux density greater than the ON threshold (100 G typical, 350 G maximum). The output transistor remains in the ON state until magnetic field reversal exposes the Hall cell to a magnetic flux density below the OFF threshold(-100 G typical,-350 G minimum).Because the operating state switches only with magnetic field reversal, and not merely with a change in its strength, these integrated circuits qualify as true Hall Effect latches.The output transistor is normally OFF when the strength of the magnetic field perpendicular to the surface of the chip is below threshold or the Operate Point. When the field strength exceeds the Operate Point, the output transistor switches ON and is capable of sinking 50 mA of current.The output transistor switches OFF when magnetic field reversal results in a magnetic flux density below the OFF Threshold. This is illustrated in the transfer characteristics graph.

The magnetic flux density is indicated in the operating-points graph for the active area of the device, which is located 0.032 " (0. 81 mm) below the branded surface of the "T"package and 0.016 " (0.4 nmt) below the branded surface of the "U" package. Note that, as shown in the plot of magnetic flux density as a function of total effecfive air gap, the "U" package offers a significant advantage in marginal flux density conditions for certain magnetic configurations.